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| RO-P-DS-3021 A Preliminary Information 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE MAAPGM0030-DIE Features 1 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation GaAs MSAG(R) Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0030-DIE is a 2-stage power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG(R)) MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Multiple Band Point-to-Point Radio SatCom ISM Band Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 8V, IDQ 240 mA2, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Output Third Order Intercept 3rd Order Intermodulation Distortion Single Carrier Level = 20 dBm 5th Order Intermodulation Distortion Single Carrier Level = 20 dBm Noise Figure 2nd Harmonic 3rd Harmonic 1. 2. Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD OTOI IM3 IM5 NF 2f 3f Typical 5.0-9.0 30 35 29 17 1.4:1 1.8:1 <4 < 400 38 -14 -33 8 -20 -35 mA mA dBm dBm dBm dB dBc dBc Units GHz dBm % dBm dB TB = MMIC Base Temperature Adjust VGG between -2.4 and -1.5V to achieve IDQ indicated. RO-P-DS-3021 A 2/6 5.0-9.0 GHz 1W Power Amplifier Maximum Operating Conditions 3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Die Attach Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG MAAPGM0030-DIE Absolute Maximum 23.0 +12.0 -3.0 470 3.2 180 -55 to +150 310 Units dBm V V mA W C C C 3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN TJ JC TB 25 Note 4 Min 4.0 -2.4 Typ 8.0 -2.0 18.0 Max 10.0 -1.5 21.0 150 Unit V V dBm C C/W C 4. Maximum MMIC Base Temperature = 150C --JC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ. 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Specifications subject to change without notice. 2 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3021 A 3/6 5.0-9.0 GHz 1W Power Amplifier 50 MAAPGM0030-DIE 50 POUT PAE 40 40 30 30 20 20 10 10 0 4 5 6 7 8 9 10 0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm. 50 POUT PAE 40 50 40 POUT (dBm) 20 20 10 10 0 4 5 6 7 8 9 10 0 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 7 GHz. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. PAE (%) 30 30 RO-P-DS-3021 A 4/6 5.0-9.0 GHz 1W Power Amplifier 50 MAAPGM0030-DIE VDD = 4 VDD = 8 VDD = 6 VDD = 10 40 P1dB (dBm) 30 20 10 0 4 5 6 7 8 9 10 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 GAIN Input VSWR Output VSWR 6 25 5 Gain (dB) 20 4 15 3 10 2 5 4 5 6 7 8 9 10 1 Frequency (GHz) Figure 4. Small Signal and VSWR vs Frequency at VDD = 8V. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. VSWR RO-P-DS-3021 A 5/6 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Mechanical Information Chip Size: 2.480 x 1.98 x 0.075 mm 0.990 mm (98 x 78 x 3 mils) 2.480 mm 1.980 mm VDD VD GN D:G GND :G GN D :G GN D:G GN D:G GN D:G GND :G GN D:G GND: G GND :G GND :G GND :G GND :G GN D:G GN D:G GND :G GN D:G GND :G OU T OUT 0.980 mm 0.990 mm IN IN GND :G GND :G GN D:G GND: G GN D:G GN D :G GND :G GND :G GN D:G GN D:G GND: G GND:G GND :G GN D:G GN D:G GND :G GN D:G GND :G GN D:G GND :G GN D:G 0.126mm. 0 0 VGG VG GND: G Chip edge to bond pad dimensions are shown to the center of the bond pad. GN D:G GND :G Figure 5. Die Layout 1.440 mm 2.353 mm Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 150 150 x 150 Size (mils) 4x8 8x6 4x6 Specifications subject to change without notice. 5 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3021 A 6/6 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE VDD 0.1 F 100 pF GND :G VDD VD GN D:G GN D:G GND:G GND :G GND :G GND :G GN D:G GN D:G GN D:G RFIN RFOUT GND: G GN D:G Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. GND :G GND :G GN D :G GN D:G GND :G GN D:G IN OU T OUT IN GND: G GND:G GND :G GN D:G GN D:G GN D:G GN D:G GND :G GND :G GND :G GND :G GN D:G GN D:G GND: G GND :G GND :G GN D:G GND :G GN D:G GND :G GN D:G GND :G VGG 100 pF VG GN D:G 0.1 F GND:G VGG Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Visit www.macom.com for additional data sheets and product information. |
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